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| PolarHTTM Power MOSFET N-Channel Enhancement Mode IXTQ 69N30P IXTT 69N30P VDSS ID25 RDS(on) = 300 V = 69 A = 49 m Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Transient Maximum Ratings 300 300 20 30 V V V V A A A mJ J V/ns W C C C C TO-3P (IXTQ) G D S (TAB) TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 4 TC = 25C 69 200 69 50 1.5 10 500 -55 ... +150 150 -55 ... +150 TO-268 (IXTT) G S D = Drain TAB = Drain D (TAB) G = Gate S = Source Features ! ! 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-3P TO-268 (TO-3P) 300 1.13/10 Nm/lb.in. 5.5 5.0 g g ! International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125C Characteristic Values Min. Typ. Max. 300 2.5 5.0 100 25 250 49 V V nA A A m ! ! ! Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % PolarHTTM DMOS transistors utilize proprietary designs and process. US patent is pending. DS99078A(04/04) (c) 204 IXYS All rights reserved IXTQ 69N30P IXTT 69N30P Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 30 48 4960 VGS = 0 V, VDS = 25 V, f = 1 MHz 760 190 25 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 4 (External) 25 75 27 156 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 32 79 S pF pF pF ns ns ns ns 180 nC nC nC 0.25 K/W (TO-247, TO-3P) 0.21 K/W TO-3P (IXTQ) Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS= 10 V; ID = 0.5 ID25, pulse test Source-Drain Diode Symbol IS ISM VSD TJM QRM Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25C, unless otherwise specified) Min. typ. Max. 69 200 1.5 A A V TO-268 Outline IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A -di/dt = 100 A/s VR = 100 V 250 3.0 ns C IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXTQ 69N30P IXTT 69N30P Fig. 1. Output Characte ris tics @ 25 De g. C 70 60 50 VGS = 10V 8V 7V 180 160 140 VGS = 10V 9V 8V Fig. 2. Extende d Output Characteris tics @ 25 deg. C I D - Amperes 40 30 6V 20 I D - Amperes 120 100 80 60 6V 40 7V 10 0 0 0.5 1 1.5 2 5V 20 0 5V 0 2 4 6 8 10 12 14 16 18 20 2.5 3 3.5 4 V D S - Volts Fig. 3. Output Characteristics @ 125 Deg. C 70 60 50 VGS = 10V 8V 7V V D S - Volts Fig. 4. RDS(on) Norm alized to ID25 Value vs . Junction Tem perature 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 I D = 69A I D = 34.5A VGS = 10V 40 6V 30 20 10 0 0 1 2 3 4 5 6 7 8 5V R D S (on) - Normalized I D - Amperes -50 -25 0 25 50 75 100 125 150 V D S - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to ID25 Value vs. ID 3.8 3.4 70 Fig. 6. Drain Curre nt vs. Case Te m pe rature VGS = 10V 60 50 R D S (on) - Normalized 3 2.6 2.2 1.8 1.4 1 0.6 0 20 40 60 80 100 120 140 160 180 TJ = 25C TJ = 125C I D - Amperes 40 30 20 10 0 -50 -25 0 25 50 75 100 125 150 I D - Amperes (c) 204 IXYS All rights reserved TC - Degrees Centigrade IXTQ 69N30P IXTT 69N30P Fig. 7. Input Adm ittance 100 90 80 Fig. 8. Transconductance 100 90 80 g f s - Siemens I D - Amperes 70 60 50 40 30 20 10 0 4 4.5 5 5.5 6 6.5 7 TJ = 125C 25C -40C 70 60 50 40 30 20 10 0 0 TJ = -40C 25C 125C 20 40 60 80 100 120 140 V G S - Volts I D - Amperes Fig. 10. Gate Charge 10 9 8 7 Fig. 9. Source Current vs. Source-To-Drain Voltage 200 180 160 VDS = 150V I D = 34.5A I G = 10mA I S - Amperes 140 VG S - Volts TJ = 125C TJ = 25C 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 120 100 80 60 40 20 0 6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 V S D - Volts Fig. 11. Capacitance 10000 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area 1000 f = 1MHz R DS(on) Limit C iss TC = 25C Capacitance - pF 25s I D - Amperes 100 1ms 1000 C oss 10ms 10 DC C rss 100 0 5 10 15 20 25 30 35 40 1 10 100 1000 IXYS reserves the right to change limits, test conditions, and dimensions. V D S - Volts V D S - Volts IXTQ 69N30P IXTT 69N30P Fig. 13. Maxim um Transient Therm al Resistance 1.00 R (th) J C - (C/W) 0.10 0.01 1 10 100 1000 Pulse Width - milliseconds (c) 204 IXYS All rights reserved |
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